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PD - 94537
IRF7491
HEXFET(R) Power MOSFET
Applications High frequency DC-DC converters
VDSS
80V
RDS(on) max
16m@VGS = 10V
ID
9.7A
Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 100C IDM PD @TA = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range
Max.
80 20 9.7 6.1 77 2.5 0.02 4.4 -55 to + 150
Units
V
A W W/C V/ns C
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) *
Typ.
--- ---
Max.
20 50
Units
C/W
Notes
through
are on page 8
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1
08/30/02
IRF7491
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
80 --- --- 3.5 --- --- --- --- --- 0.08 14 --- --- --- --- --- --- --- 16 5.5 1.0 250 100 -100 nA V m V A
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 5.8A VDS = VGS, ID = 250A VDS = 64V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
V/C Reference to 25C, ID = 1mA
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
9.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 51 18 18 22 19 32 10 2940 290 160 980 210 310 --- 76 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC S ID = 5.8A VDS = 40V VGS = 10V VDD = 40V ID = 5.8A RG = 6.2 VGS = 10V VGS = 0V VDS = 25V
Conditions
VDS = 25V, ID = 5.8A
= 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 64V, = 1.0MHz VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 130 5.8 Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 47 110 9.7 A 77 1.3 --- --- V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 5.8A, VGS = 0V TJ = 25C, IF = 5.8A, VDD = 25V di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7491
100
TOP VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V 6.0V
100
TOP VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V 6.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
1
10
6.0V
0.1
6.0V
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100 1000 1 0.1 1
20s PULSE WIDTH Tj = 150C
10 100 1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
2.5
T J = 150C
10.00
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 9.7A
ID, Drain-to-Source Current ()
2.0
1.5
1.00
T J = 25C
1.0
0.5
VDS = 25V 20s PULSE WIDTH
0.10 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7491
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
12.0 ID= 5.8A
VGS , Gate-to-Source Voltage (V)
10.0
10000
VDS= 64V VDS= 40V VDS= 16V
C, Capacitance(pF)
Ciss
1000
8.0
6.0
Crss
100
Coss
4.0
2.0
10 1 10 100
0.0 0 10 20 30 40 50 60
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
10.00
T J = 150C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100sec
1.00
T J = 25C
1msec 1 T A = 25C Tj = 150C Single Pulse 0.1 0 1 10 10msec
VGS = 0V 0.10 0.0 0.2 0.4 0.6 0.8 1.0 VSD, Source-toDrain Voltage (V)
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7491
12
VDS VGS
RD
ID , Drain Current (A)
9
D.U.T.
+
RG
-VDD
6
10V
Pulse Width 1 s Duty Factor 0.1 %
3
Fig 10a. Switching Time Test Circuit
VDS 90%
0
25
50
75
100
125
150
TA , Ambient Temperature (C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7491
RDS (on) , Drain-to-Source On Resistance (m )
20 19 18 17 16 15 14 13 12 11 10 0 10 20 30 40 50 60 70 80 ID , Drain Current (A) VGS = 10V
RDS(on) , Drain-to -Source On Resistance (m )
45 40 35 30 25
ID = 9.7A
20 15 10 5 0 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
300
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
TOP
240
Charge
IG ID
BOTTOM
ID 2.6A 4.7A 5.8A
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
180
120
15V
V(BR)DSS tp
VDS L
60
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0 25 50 75 100 125 150
A
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7491
SO-8 Package Details
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
8 6 E 1
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X e
e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y
K x 45
8X L 7
8X c
NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050]
FOOTPRINT 8X 0.72 [.028]
6.46 [.255]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER
INTERNATIONAL RECTIFIER LOGO
YWW XXXX F7101
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7
IRF7491
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 7.4mH RG = 25, IAS = 5.8A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD 5.8A, di/dt 250A/s, VDD V(BR)DSS, TJ 150C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/02
8
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